BPD110-FC-NIR
(Balanced Photodetector
High-sensitivity, Balanced Photodetector - Near Infrared
The BPD110 balanced photodetector from Menlo Systems functions as a balanced receiver by subtracting two optical input signals and effectively cancelling common-mode noise, allowing for the precise detection of subtle signal variations. It integrates Two carefully matched photodiodes are integrated with an ultra-lownoise, high-speed to achieve a high common mode rejection ratio (CMRR) and superior noise suppression. It offers an excellent signal-to-noise ratio and is adjustable gain, a 3 dB bandwidth of up to 100 MHz, and a broad wavelength range from 320 nm to 2600 nm, the BPD110 is ideal for a variety of high-precision optical applications.
Key Specifications
- Broad Frequency Range
1 – 300 MHz operation with 3 dB bandwidth up to 110 MHz
- Wide Spectral Sensitivity
Covers 950 – 1650 nm wavelength range
- Low-Noise Amplification
Integrated RF amplifier ensures clean signals
- OEM-Ready Package
Integrated low-noise amplifier, power supply, easy-to-use design
- Switchable Gain
Two gain settings for flexible operation
Features
- OEM Integration
- Fiber-coupled Optical Input
- Two Switchable Gain Settings
- Integrated Low-noise Amplifier
- Easy-to-use Package
- Low-noise Power Supply Included
Applications
- Beat Detection Unit
- Detection of Low Light Level Signals
- Heterodyne Laser Beat Signal Detection
Specifications
| Detector Type | InGaAs | |
| Optical Input | FC/PC receptacle | |
| Spectral Range | 950-1650 nm | |
| Frequency Range | 1-300 MHz | |
| Common mode rejection ratio (CMRR) | typ. 25 | |
| Damage Threshold | 3 mW | |
| Detector Diameter | 120 μm | |
| Lambda Peak Sensitivity | 1550 nm | |
| Peak Sensitivity | typ. 0.85 A/W | |
High Gain Setting | Saturation Limit (calculated) | 22 μW AC |
| 3 dB Bandwidth | 1-100 MHz | |
| Gain | typ. 90 kV/A | |
| Dark State Noise Level | -120 dBm/Hz | |
| NEP (calculated) | <2.5 pA/√Hz | |
Low Gain Setting | Saturation Limit (calculated) | 79 μW AC |
| 3 dB Bandwidth | 1-110 MHz | |
| Gain | typ. 25 kV/A | |
| Dark State Noise Level | -130 dBm/Hz | |
| NEP (calculated) | <3 pA/√Hz | |
| Output Impedance | 50 Ω | |
| Output Coupling | AC | |
| Output Signal | 0-2 V | |
| Output Connector | SMA female | |
| Supply Voltage | +12 V | |
| Current Consumption | <60 mA | |
| Operating Temperature | 10-40 °C | |
| Storage Temperature | -20-80 °C | |
| Storage Humidity | 10-90 % RH | |
| Device Dimensions | 20x60x70 mm³ | |
